G110N06T
Goford Semiconductor
型号:
G110N06T
封装:
TO-220
批次:
-
数据手册:
-
描述:
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
购买数量:
库存 : 96
最小起订量: 1 最小递增量: 1
数量
单价
1
1.52
10
1.24355
100
0.967195
500
0.819793
1000
0.667812
2000
0.628662
5000
0.598728
10000
0.571092
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 20A, 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5538 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
2000+日均询价数量
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