Goford Semiconductor
型号:
G10P03
封装:
8-DFN (3.15x3.05)
批次:
-
数据手册:
-
描述:
P30V,RD(MAX)<26M@-4.5V,RD(MAX)<3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.4655
10
0.3952
100
0.274455
500
0.214263
1000
0.174154
2000
0.155676
请发送询价,我们将立即回复。
Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 20W |
Supplier Device Package | 8-DFN (3.15x3.05) |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 15 V |
Current - Continuous Drain (Id) @ 25°C | 10A |