G1006LE

Goford Semiconductor

型号:

G1006LE

品牌:

封装:

SOT-23-3

批次:

数据手册:

描述:

N100V,RD(MAX)<150M@10V,RD(MAX)<1

购买数量:

库存 : 7333

最小起订量: 1 最小递增量: 1

数量

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参数信息

用户指南

Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	150mOhm @ 3A, 10V
Power Dissipation (Max)	1.5W (Tc)
Supplier Device Package	SOT-23-3
Gate Charge (Qg) (Max) @ Vgs	18.2 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	622 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)