Goford Semiconductor
型号:
G04P10HE
封装:
SOT-223
批次:
-
描述:
P-100V,-4A,RD(MAX)<200M@-10V,VTH
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.5035
10
0.43035
100
0.299345
500
0.233738
1000
0.189981
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Mfr | Goford Semiconductor |
Series | G |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
Power Dissipation (Max) | 1.2W (Tc) |
Supplier Device Package | SOT-223 |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Drain to Source Voltage (Vdss) | 100 V |
Input Capacitance (Ciss) (Max) @ Vds | 1647 pF @ 50 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |