Goford Semiconductor
型号:
G01N20LE
封装:
SOT-23-3
批次:
-
数据手册:
-
描述:
N200V,RD(MAX)<850M@10V,RD(MAX)<9
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.3895
10
0.3021
100
0.181355
500
0.167922
1000
0.11418
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 850mOhm @ 1.7A, 10V |
Power Dissipation (Max) | 1.5W (Tc) |
Supplier Device Package | SOT-23-3 |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
Drain to Source Voltage (Vdss) | 200 V |
Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |