F1T6G

Taiwan Semiconductor Corporation

型号:

F1T6G

封装:

TS-1

批次:

-

数据手册:

描述:

DIODE GEN PURP 800V 1A TS-1

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Taiwan Semiconductor Corporation
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Tape & Reel (TR)
Technology Standard
Mounting Type Through Hole
Package / Case T-18, Axial
Product Status Active
Base Product Number F1T6
Capacitance @ Vr, F 15pF @ 4V, 1MHz
Supplier Device Package TS-1
Reverse Recovery Time (trr) 500 ns
Current - Reverse Leakage @ Vr 5 µA @ 800 V
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A