Taiwan Semiconductor Corporation
型号:
ES1JLHMTG
封装:
Sub SMA
批次:
-
描述:
DIODE GEN PURP 600V 1A SUB SMA
购买数量:
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Mfr | Taiwan Semiconductor Corporation |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Series | Automotive, AEC-Q101 |
Package | Tape & Reel (TR) |
Technology | Standard |
Mounting Type | Surface Mount |
Package / Case | DO-219AB |
Product Status | Active |
Base Product Number | ES1J |
Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
Supplier Device Package | Sub SMA |
Reverse Recovery Time (trr) | 35 ns |
Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Current - Average Rectified (Io) | 1A |
Operating Temperature - Junction | -55°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |