DMWSH120H90SM4Q

Diodes Incorporated

型号:

DMWSH120H90SM4Q

封装:

TO-247-4

批次:

-

数据手册:

描述:

SIC MOSFET BVDSS: >1000V TO247-4

购买数量:

库存 : 19

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    18.696

  • 10

    16.473

  • 100

    14.246675

  • 500

    12.911032

请发送询价,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Vgs (Max) +19V, -8V
Technology SiC (Silicon Carbide Junction Transistor)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 5mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 97.5mOhm @ 20A, 15V
Power Dissipation (Max) 235W (Tc)
Supplier Device Package TO-247-4
Gate Charge (Qg) (Max) @ Vgs 47.6 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1112 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On) 15V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)