Diodes Incorporated
型号:
DMN2005UFG-7
封装:
PowerDI3333-8
批次:
-
描述:
MOSFET N-CH 20V 18.1A PWRDI3333
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.5415
10
0.4788
100
0.36708
500
0.290149
1000
0.232123
请发送询价,我们将立即回复。
Mfr | Diodes Incorporated |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Base Product Number | DMN2005 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 13.5A, 4.5V |
Power Dissipation (Max) | 1.05W (Ta) |
Supplier Device Package | PowerDI3333-8 |
Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 10 V |
Drain to Source Voltage (Vdss) | 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 6495 pF @ 10 V |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C | 18.1A (Tc) |