BSC882N03LS G

Infineon Technologies

型号:

BSC882N03LS G

封装:

PG-TDSON-8-6

批次:

-

数据手册:

-

描述:

N-CHANNEL POWER MOSFET

购买数量:

库存 : 5000

最小起订量: 1 最小递增量: 1

数量

单价

  • 702

    0.4085

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™3 M
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V
Power Dissipation (Max) -
Supplier Device Package PG-TDSON-8-6
Drain to Source Voltage (Vdss) 34 V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C -