BSC200P03LSG

Infineon Technologies

型号:

BSC200P03LSG

封装:

PG-TDSON-8-6

批次:

-

数据手册:

-

描述:

P-CHANNEL POWER MOSFET

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
FET Type P-Channel
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 1V @ 100µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 20mOhm @ 12.5A, 10V
Power Dissipation (Max) 2.5W (Ta), 63W (Tc)
Supplier Device Package PG-TDSON-8-6
Gate Charge (Qg) (Max) @ Vgs 48.5 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2430 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 12.5A (Tc)