6A100GHB0G
Taiwan Semiconductor Corporation
型号:
6A100GHB0G
封装:
R-6
批次:
-
数据手册:
描述:
DIODE GEN PURP 1KV 6A R-6
购买数量:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Taiwan Semiconductor Corporation |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Through Hole |
| Package / Case | R-6, Axial |
| Product Status | Active |
| Base Product Number | 6A100 |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Supplier Device Package | R-6 |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 6A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 6 A |
推荐型号
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
