630AT

Goford Semiconductor

型号:

630AT

品牌:

封装:

TO-220

批次:

数据手册:

描述:

N200V,RD(MAX)<250M@10V,RD(MAX)<3

购买数量:

库存 : 63

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	Goford Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	250mOhm @ 1A, 10V
Power Dissipation (Max)	83W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	509 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)