Goford Semiconductor
型号:
60N06
封装:
TO-252 (DPAK)
批次:
-
数据手册:
-
描述:
N60V,RD(MAX)<17M@10V,RD(MAX)<21M
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.684
10
0.5928
100
0.41021
500
0.342741
1000
0.291688
请发送询价,我们将立即回复。
Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 17mOhm @ 5A, 10V |
Power Dissipation (Max) | 85W |
Supplier Device Package | TO-252 (DPAK) |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 30 V |
Current - Continuous Drain (Id) @ 25°C | 50A |