1N5417 TR
Central Semiconductor Corp
型号:
1N5417 TR
封装:
GPR-4AM
批次:
-
数据手册:
描述:
DIODE GEN PURP 200V 3A GPR-4AM
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Central Semiconductor Corp |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Through Hole |
| Package / Case | R-4, Axial |
| Product Status | Obsolete |
| Capacitance @ Vr, F | 150pF @ 12V, 1MHz |
| Supplier Device Package | GPR-4AM |
| Reverse Recovery Time (trr) | 150 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 3 A |
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