1N5407GHB0G
Taiwan Semiconductor Corporation
型号:
1N5407GHB0G
封装:
DO-201AD
批次:
-
数据手册:
描述:
DIODE GEN PURP 800V 3A DO201AD
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Taiwan Semiconductor Corporation |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Product Status | Active |
| Base Product Number | 1N5407 |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Supplier Device Package | DO-201AD |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 3 A |
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