XPW4R10ANB,L1XHQ
Toshiba Semiconductor and Storage
Product No:
XPW4R10ANB,L1XHQ
Manufacturer:
Package:
8-DSOP Advance
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 70A AEC-Q101
Quantity:
In Stock : 16494
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.1185
10
1.75845
100
1.39954
500
1.184213
1000
1.004786
2000
0.95455
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Standard |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Operating Temperature | -55°C ~ 175°C |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 35A, 10V |
| Power Dissipation (Max) | 170W (Tc) |
| Supplier Device Package | 8-DSOP Advance |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4970 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A |
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30,000,000Standard Product Unit
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