XPJR6604PB,LXHQ
Toshiba Semiconductor and Storage
Product No:
XPJR6604PB,LXHQ
Manufacturer:
Package:
S-TOGL™
Batch:
-
Datasheet:
-
Description:
40V; UMOS9; 0.66MOHM; S-TOGL
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101, U-MOSIX-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 5-PowerSFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 0.66mOhm @ 100A, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Supplier Device Package | S-TOGL™ |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11380 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
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