TW070J120B,S1Q
Toshiba Semiconductor and Storage
Product No:
TW070J120B,S1Q
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
SICFET N-CH 1200V 36A TO3P
Quantity:
In Stock : 103
Minimum: 1 Multiples: 1
Qty
Unit Price
1
29.6305
10
26.3283
100
23.028
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | Standard |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.8V @ 20mA |
| Base Product Number | TW070J120 |
| Operating Temperature | -55°C ~ 175°C |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 20V |
| Power Dissipation (Max) | 272W (Tc) |
| Supplier Device Package | TO-3P(N) |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
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