TW060N120C,S1F
Toshiba Semiconductor and Storage
Product No:
TW060N120C,S1F
Manufacturer:
Package:
TO-247
Batch:
-
Datasheet:
-
Description:
G3 1200V SIC-MOSFET TO-247 60MO
Quantity:
In Stock : 90
Minimum: 1 Multiples: 1
Qty
Unit Price
1
18.1355
10
15.9752
100
13.8168
500
12.521475
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 4.2mA |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 18A, 18V |
| Power Dissipation (Max) | 170W (Tc) |
| Supplier Device Package | TO-247 |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1530 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
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