TPWR6003PL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPWR6003PL,L1Q

Package:

8-DSOP Advance

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 150A 8DSOP

Quantity:

In Stock : 756

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.793

  • 10

    2.3484

  • 100

    1.89981

  • 500

    1.68872

  • 1000

    1.445966

  • 2000

    1.36153

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 1mA
Base Product Number TPWR6003
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 0.6mOhm @ 50A, 10V
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Supplier Device Package 8-DSOP Advance
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)