TPW4R008NH,L1Q

Toshiba Semiconductor and Storage

Product No:

TPW4R008NH,L1Q

Package:

8-DSOP Advance

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 80V 116A 8DSOP

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number TPW4R008
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Supplier Device Package 8-DSOP Advance
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 116A (Tc)