TPW1R104PB,L1XHQ
Toshiba Semiconductor and Storage
Product No:
TPW1R104PB,L1XHQ
Manufacturer:
Package:
8-DSOP Advance
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 40V 120A 8DSOP
Quantity:
In Stock : 9973
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.071
10
1.7157
100
1.365815
500
1.155713
1000
0.980609
2000
0.93158
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 500µA |
| Base Product Number | TPW1R104 |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 1.14mOhm @ 60A, 10V |
| Power Dissipation (Max) | 960mW (Ta), 132W (Tc) |
| Supplier Device Package | 8-DSOP Advance |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
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