TPN22006NH,LQ
Toshiba Semiconductor and Storage
Product No:
TPN22006NH,LQ
Manufacturer:
Package:
8-TSON Advance (3.3x3.3)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 60V 9A 8TSON
Quantity:
In Stock : 3000
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.874
10
0.76665
100
0.58748
500
0.464398
1000
0.371516
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Base Product Number | TPN22006 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.5A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 18W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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