TPH3208PD

Transphorm

Product No:

TPH3208PD

Manufacturer:

Transphorm

Package:

TO-220AB

Batch:

-

Datasheet:

-

Description:

GANFET N-CH 650V 20A TO220AB

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Transphorm
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±18V
Technology GaNFET (Gallium Nitride)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Obsolete
Vgs(th) (Max) @ Id 2.6V @ 300µA
Operating Temperature -55°C ~ 150°C
Rds On (Max) @ Id, Vgs 130mOhm @ 13A, 8V
Power Dissipation (Max) 96W (Tc)
Supplier Device Package TO-220AB
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 8 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)