TPC6012(TE85L,F,M)
Toshiba Semiconductor and Storage
Product No:
TPC6012(TE85L,F,M)
Manufacturer:
Package:
VS-6 (2.9x2.8)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 20V 6A VS-6
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Base Product Number | TPC6012 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 4.5V |
| Power Dissipation (Max) | 700mW (Ta) |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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