TP65H150G4LSG-TR

Transphorm

Product No:

TP65H150G4LSG-TR

Manufacturer:

Transphorm

Package:

2-PQFN (8x8)

Batch:

-

Datasheet:

-

Description:

650 V 13 A GAN FET

Quantity:

In Stock : 2906

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    5.0065

  • 10

    4.20565

  • 100

    3.402425

  • 500

    3.024344

  • 1000

    2.589596

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Product Information

Parameter Info
User Guide
Mfr Transphorm
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology GaNFET (Gallium Nitride)
FET Feature -
Mounting Type Surface Mount
Package / Case 2-PowerTSFN
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 500µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 180mOhm @ 8.5A, 10V
Power Dissipation (Max) 52W (Tc)
Supplier Device Package 2-PQFN (8x8)
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)