TP65H035G4WSQA
Transphorm
Product No:
TP65H035G4WSQA
Manufacturer:
Package:
TO-247-3
Batch:
-
Datasheet:
Description:
650 V 46.5 GAN FET
Quantity:
In Stock : 350
Minimum: 1 Multiples: 1
Qty
Unit Price
1
18.354
10
16.1709
100
13.98571
500
12.67452
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Product Information
Parameter Info
User Guide
| Mfr | Transphorm |
| Series | Automotive, AEC-Q101 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V |
| Power Dissipation (Max) | 187W (Tc) |
| Supplier Device Package | TO-247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 47.2A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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