TK6A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK6A50D(STA4,Q,M)

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 500V 6A TO220SIS

Quantity:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.254

  • 10

    1.121

  • 100

    0.873905

  • 500

    0.721924

  • 1000

    0.569943

  • 2000

    0.531952

  • 5000

    0.505352

  • 10000

    0.486352

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 1mA
Base Product Number TK6A50
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.4Ohm @ 3A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)