TK58A06N1,S4X

Toshiba Semiconductor and Storage

Product No:

TK58A06N1,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 58A TO220SIS

Quantity:

In Stock : 4

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.216

  • 10

    1.0868

  • 100

    0.8474

  • 500

    0.700055

  • 1000

    0.552672

  • 2000

    0.515831

  • 5000

    0.490038

  • 10000

    0.471618

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 500µA
Base Product Number TK58A06
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 5.4mOhm @ 29A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)