TK55D10J1(Q)

Toshiba Semiconductor and Storage

Product No:

TK55D10J1(Q)

Package:

TO-220(W)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 55A TO220

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Obsolete
Vgs(th) (Max) @ Id 2.3V @ 1mA
Base Product Number TK55D10
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 10.5mOhm @ 27A, 10V
Power Dissipation (Max) 140W (Tc)
Supplier Device Package TO-220(W)
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 55A (Ta)