TK35N65W,S1F
Toshiba Semiconductor and Storage
Product No:
TK35N65W,S1F
Manufacturer:
Package:
TO-247
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 35A TO247
Quantity:
In Stock : 15
Minimum: 1 Multiples: 1
Qty
Unit Price
1
7.182
10
6.4904
100
5.373105
500
4.678807
1000
4.075092
2000
3.924165
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 2.1mA |
| Base Product Number | TK35N65 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 17.5A, 10V |
| Power Dissipation (Max) | 270W (Tc) |
| Supplier Device Package | TO-247 |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
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