TK35E08N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK35E08N1,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 80V 55A TO220

Quantity:

In Stock : 40

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.0545

  • 10

    0.93955

  • 100

    0.73264

  • 500

    0.605245

  • 1000

    0.477831

  • 2000

    0.445978

  • 5000

    0.423681

  • 10000

    0.40775

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 300µA
Base Product Number TK35E08
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 12.2mOhm @ 17.5A, 10V
Power Dissipation (Max) 72W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)