TK34E10N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK34E10N1,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 75A TO220

Quantity:

In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.4535

  • 10

    1.29675

  • 100

    1.010705

  • 500

    0.834955

  • 1000

    0.659176

  • 2000

    0.61523

  • 5000

    0.584468

  • 10000

    0.562495

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 500µA
Base Product Number TK34E10
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 9.5mOhm @ 17A, 10V
Power Dissipation (Max) 103W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)