TK32A12N1,S4X

Toshiba Semiconductor and Storage

Product No:

TK32A12N1,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 120V 32A TO220SIS

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 500µA
Base Product Number TK32A12
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 13.8mOhm @ 16A, 10V
Power Dissipation (Max) 30W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)