TK31V60W,LVQ

Toshiba Semiconductor and Storage

Product No:

TK31V60W,LVQ

Package:

4-DFN-EP (8x8)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 30.8A 4DFN

Quantity:

In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    8.2935

  • 10

    7.10505

  • 100

    5.921065

  • 500

    5.224468

  • 1000

    4.702025

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Base Product Number TK31V60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 98mOhm @ 15.4A, 10V
Power Dissipation (Max) 240W (Tc)
Supplier Device Package 4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)