Toshiba Semiconductor and Storage
Product No:
TK31V60W,LVQ
Manufacturer:
Package:
4-DFN-EP (8x8)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 30.8A 4DFN
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
8.2935
10
7.10505
100
5.921065
500
5.224468
1000
4.702025
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Mfr | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 4-VSFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Base Product Number | TK31V60 |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 98mOhm @ 15.4A, 10V |
Power Dissipation (Max) | 240W (Tc) |
Supplier Device Package | 4-DFN-EP (8x8) |
Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
Drain to Source Voltage (Vdss) | 600 V |
Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |