TK31J60W,S1VQ
Toshiba Semiconductor and Storage
Product No:
TK31J60W,S1VQ
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 30.8A TO3P
Quantity:
In Stock : 5
Minimum: 1 Multiples: 1
Qty
Unit Price
1
8.493
10
7.6703
100
6.34999
500
5.529494
1000
4.816016
2000
4.637653
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
| Base Product Number | TK31J60 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 15.4A, 10V |
| Power Dissipation (Max) | 230W (Tc) |
| Supplier Device Package | TO-3P(N) |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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