TK28E65W,S1X

Toshiba Semiconductor and Storage

Product No:

TK28E65W,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR TO-

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1.6mA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 110mOhm @ 13.8A, 10V
Power Dissipation (Max) 230W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 27.6A (Ta)