TK10E80W,S1X
Toshiba Semiconductor and Storage
Product No:
TK10E80W,S1X
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
PB-F POWER MOSFET TRANSISTOR TO-
Quantity:
In Stock : 50
Minimum: 1 Multiples: 1
Qty
Unit Price
1
3.2965
10
2.77115
100
2.24181
500
1.992682
1000
1.706238
2000
1.606612
5000
1.541375
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 450µA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 4.8A, 10V |
| Power Dissipation (Max) | 130W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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