SSM6N7002KFU,LXH
Toshiba Semiconductor and Storage
Product No:
SSM6N7002KFU,LXH
Manufacturer:
Package:
US6
Batch:
-
Datasheet:
-
Description:
SMOS 2 IN 1 DUAL NCH HIGH ESD PR
Quantity:
In Stock : 8638
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.3515
10
0.24795
100
0.12521
500
0.11096
1000
0.086355
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101, U-MOSVII-H |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 285mW (Ta) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Base Product Number | SSM6N7002 |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 100mA, 10V |
| Supplier Device Package | US6 |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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