SSM6K217FE,LF
Toshiba Semiconductor and Storage
Product No:
SSM6K217FE,LF
Manufacturer:
Package:
ES6
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 40V 1.8A ES6
Quantity:
In Stock : 24907
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.3325
10
0.27075
100
0.184205
500
0.138168
1000
0.103626
2000
0.09499
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVII-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Base Product Number | SSM6K217 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 1A, 8V |
| Power Dissipation (Max) | 500mW (Ta) |
| Supplier Device Package | ES6 |
| Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 4.2 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
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15,000 ㎡In-stock Warehouse
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