SSM6J422TU,LXHF
Toshiba Semiconductor and Storage
Product No:
SSM6J422TU,LXHF
Manufacturer:
Package:
UF6
Batch:
-
Datasheet:
-
Description:
SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Quantity:
In Stock : 2567
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.38
10
0.323
100
0.224485
500
0.175294
1000
0.142481
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101, U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +6V, -8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 42.7mOhm @ 3A, 4.5V |
| Power Dissipation (Max) | 1W (Ta) |
| Supplier Device Package | UF6 |
| Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
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