Toshiba Semiconductor and Storage
Product No:
SSM6H19NU,LF
Manufacturer:
Package:
6-UDFN (2x2)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 40V 2A 6UDFN
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.342
10
0.2755
100
0.18734
500
0.140467
1000
0.105355
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Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSVII-H |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 1.2V @ 1mA |
Base Product Number | SSM6H19 |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 185mOhm @ 1A, 8V |
Power Dissipation (Max) | 1W (Ta) |
Supplier Device Package | 6-UDFN (2x2) |
Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.2 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 10 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |