SQM100N10-10_GE3
Vishay Siliconix
Product No:
SQM100N10-10_GE3
Manufacturer:
Package:
TO-263 (D²Pak)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 100A TO263
Quantity:
In Stock : 426
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.85
10
2.56215
100
2.09931
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SQM100 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Supplier Device Package | TO-263 (D²Pak) |
| Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8050 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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