SI2311DS-T1-E3
Vishay Siliconix
Product No:
SI2311DS-T1-E3
Manufacturer:
Package:
SOT-23-3 (TO-236)
Batch:
-
Datasheet:
Description:
MOSFET P-CH 8V 3A SOT23-3
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Base Product Number | SI2311 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 4.5V |
| Power Dissipation (Max) | 710mW (Ta) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 4 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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