RN1906FE,LF(CT

Toshiba Semiconductor and Storage

Product No:

RN1906FE,LF(CT

Package:

ES6

Batch:

-

Datasheet:

-

Description:

TRANS 2NPN PREBIAS 0.1W ES6

Quantity:

In Stock : 3700

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.228

  • 10

    0.18525

  • 100

    0.09842

  • 500

    0.064771

  • 1000

    0.044042

  • 2000

    0.039729

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Base Product Number RN1906
Resistor - Base (R1) 4.7kOhms
Frequency - Transition 250MHz
Supplier Device Package ES6
Resistor - Emitter Base (R2) 47kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V