Toshiba Semiconductor and Storage
Product No:
RN1906FE,LF(CT
Manufacturer:
Package:
ES6
Batch:
-
Datasheet:
-
Description:
TRANS 2NPN PREBIAS 0.1W ES6
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.228
10
0.18525
100
0.09842
500
0.064771
1000
0.044042
2000
0.039729
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Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Product Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Base Product Number | RN1906 |
Resistor - Base (R1) | 4.7kOhms |
Frequency - Transition | 250MHz |
Supplier Device Package | ES6 |
Resistor - Emitter Base (R2) | 47kOhms |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Voltage - Collector Emitter Breakdown (Max) | 50V |