MT3S111TU,LF

Toshiba Semiconductor and Storage

Product No:

MT3S111TU,LF

Package:

UFM

Batch:

-

Datasheet:

-

Description:

RF SIGE NPN BIPOLAR TRANSISTOR N

Quantity:

In Stock : 2940

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.5605

  • 10

    0.494

  • 25

    0.44612

  • 100

    0.39026

  • 250

    0.342456

  • 500

    0.302632

  • 1000

    0.238916

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Gain 12.5dB
Series -
Package Tape & Reel (TR)
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Product Status Active
Transistor Type NPN
Base Product Number MT3S111
Operating Temperature 150°C (TJ)
Frequency - Transition 10GHz
Supplier Device Package UFM
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max) 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 6V