MT3S111P(TE12L,F)

Toshiba Semiconductor and Storage

Product No:

MT3S111P(TE12L,F)

Package:

PW-MINI

Batch:

-

Datasheet:

-

Description:

RF TRANS NPN 6V 8GHZ PW-MINI

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Gain 10.5dB
Series -
Package Tape & Reel (TR)
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-243AA
Product Status Obsolete
Transistor Type NPN
Base Product Number MT3S111
Operating Temperature 150°C (TJ)
Frequency - Transition 8GHz
Supplier Device Package PW-MINI
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
Current - Collector (Ic) (Max) 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 6V