Harris Corporation
Product No:
IRFD123
Manufacturer:
Package:
4-HVMDIP
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 1.3A 4DIP
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
346
0.8265
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Mfr | Harris Corporation |
Series | - |
Package | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | 4-DIP (0.300", 7.62mm) |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V |
Supplier Device Package | 4-HVMDIP |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
Drain to Source Voltage (Vdss) | 100 V |
Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |