HN3C10FUTE85LF

Toshiba Semiconductor and Storage

Product No:

HN3C10FUTE85LF

Package:

US6

Batch:

-

Datasheet:

-

Description:

RF TRANS 2 NPN 12V 7GHZ US6

Quantity:

In Stock : 101

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.5415

  • 10

    0.4579

  • 100

    0.31863

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Gain 11.5dB
Series -
Package Tape & Reel (TR)
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Product Status Active
Transistor Type 2 NPN (Dual)
Base Product Number HN3C10
Operating Temperature -
Frequency - Transition 7GHz
Supplier Device Package US6
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Current - Collector (Ic) (Max) 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Voltage - Collector Emitter Breakdown (Max) 12V